Improvement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
http://link.springer.com/content/pdf/10.1007/s12596-010-0027-4.pdf
Reference25 articles.
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2. H.H. Park, B.S. Yoo, Low threshold current density and high efficiency surface-emitting lasers with a periodic gain active structure. ETRI J 17(1), 1–10 (1995)
3. Y. Liu, W.C. Ng, B. Klein, K. Hess, Effects of spatial nonuniformity of optical transverse modes on the modulation response of VCSELs. IEEE J Quantum Electron 39(1), 99–108 (2003)
4. Y. Liu, W.C. Ng, F. Oyafuso, B. Klein, K. Hess, Simulating the modulation response of VCSELs: the effects of diffusion capacitance and spatial hole-burning. IEE Proc.-Optoelectron 149(4), 182–188 (2002)
5. E.S. Bjorlin, J. Geske, M. Mehta, J. Piprek, J.E. Bowers, Temperature dependence of the relaxation resonance frequency of long-wavelength VCSELs. IEEE Photonics Technol Lett 17(5), 944–946 (2005)
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