Solid state analysis of quarter pyramid c-Si/a-Si:H/µc-SiGe solar cells using 2D device characteristics
Author:
Funder
Northern Borders University
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics
Link
https://link.springer.com/content/pdf/10.1007/s12596-023-01435-z.pdf
Reference36 articles.
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3. H. Yasuda et al., Development of pulsed TEM equipped with nitride semiconductor photocathode for high-speed observation and material nanofabrication. Quantum Beam Sci. 5(1), 5 (2021)
4. X. Zhang et al., Investigation of micromorphology and carrier recombination dynamics for InGaN/GaN multi-quantum dots grown by molecular beam epitaxy. Crystals 11(11), 1312 (2021)
5. V. Jmerik, Semiconductor heterostructures (with quantum wells, quantum dots and superlattices). Nanomaterials 12(10), 1685 (2022)
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