Author:
Xiao Meng,Du Yong,Xu Kai,Hu Biao,Liu Zhijian,Shi Chenying,Premović Milena,Liu Yuling
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Condensed Matter Physics
Reference34 articles.
1. H. Li, X.X. Zhong, and F. He, The Production Technology Research of Microwave Schottkey Silicide Barrier Diodes, Semicond. Technol., 1999, 24(6), p 24–28
2. S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa, Silicide and Germanide Technology for Contacts and Gates in MOSFET Applications, Thin Solid Films, 2008, 517(1), p 80–83
3. J. Kim, J. Yi, and W.A. Anderson, Metal Silicide-Templated Growth of Quality Si Films for Schottky-Diodes, Thin Solid Films, 2010, 518(22), p 6510–6513
4. E.G. Colgan, J.P. Gambinno, and B. Cunningham, Nickel Silicide Thermal Stability on Polycrystalline and Single Crystalline Silicon, Mater. Chem. Phys., 1996, 46(2–3), p 209–214
5. J.F. Liu, H.B. Chen, and J.Y. Feng, Enhanced Thermal Stability of NiSi Flims on Si(111) Substrates by a Thin Pt Interlayer, J. Cryst. Growth, 2000, 220(4), p 488–493
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献