Study on spectral responsivity characteristics for $$\hbox {InP/In}_{0.53}\hbox {Ga}_{0.47}\hbox {As/InP}$$ InP/In 0.53 Ga 0.47 As/InP p-i-n photodiodes
-
Published:2014-11-01
Issue:7
Volume:47
Page:1889-1900
-
ISSN:0306-8919
-
Container-title:Optical and Quantum Electronics
-
language:en
-
Short-container-title:Opt Quant Electron
Author:
Wang Xiaodong,Hou Liwei,Xie Wei,Wang Bingbing,Chen Xiaoyao,Pan Ming
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Burkhard, H., Dinges, H.W., Kuphal, E.: Optical properties of $$\text{ In }_{{\rm 1-x}}\text{ Ga }_{{\rm x}}\text{ P }_{1-y}\text{ As }_{{\rm y}}$$ In 1 - x Ga x P 1 - y As y , InP, GaAs, and GaP determined by ellipsometry. J. Appl. Phys. 53, 655–662 (1982) 2. Guo, N., Hu, W.D., Chen, X.S., Meng, C., Lv, Y.Q., Lu, W.: Optimization of microlenses for InSb infrared focal-plane arrays. J. Electron. Mater. 40, 1647–1650 (2011) 3. Hoffman, A., Sessler, T., Rosbeck, J., Acton, D., Ettenberg, M.: Megapixel InGaAs arrays for low background applications. Proc. SPIE 5783, 32–38 (2005) 4. Hu, W.D., Chen, X.S., Ye, Z.H., Chen, Y.G., Yin, F., Zhang, B., Lu, W.: Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: experiment and simulation. Appl. Phys. Lett. 101, 181108 (2012) 5. Hu, W.D., Chen, X.S., Ye, Z.H., Feng, A.L., Yin, F., Zhang, B., Liao, L., Lu, W.: Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for long-wavelength HgCdTe-based photovoltaic infrared detector pixel arrays. IEEE J. Sel. Top. Quantum Electron. 19, 4100107 (2013)
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|