Influence of the incident optical field distribution on uni-traveling-carrier photodiode-Reference-Cited by-同舟云学术

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Influence of the incident optical field distribution on uni-traveling-carrier photodiode

Published:2022-09-17 Issue:11 Volume:54 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Du Jiawei,Huang Yongqing^ORCID,Xiao Chaozheng,Duan Xiaofeng,Liu Kai,Yang Yisu,Ren Xiaomin

Funder

National Natural Science Foundation of China

Key Technologies Research and Development Program

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11082-022-03998-w.pdf

Reference37 articles.

1. Atlas User’s Manual: :Silvaco International(2016)

2. Beling, A., Pan, H., Chen, H., Campbell, J.C.: High-Power Modified Uni-Traveling Carrier Photodiode with > 50 dBm Third Order Intercept Point. In: IEEE MTT-S International Microwave Symposium Digest. pp. 499–502 (2008)

3. Chao, E., Xiong, B., Sun, C., Hao, Z., Wang, J., Wang, L., Han, Y., Li, H., Yu, J., Luo, Y.: D-band MUTC Photodiodes with Flat Frequency Response. IEEE J. Sel. Top. Quantum Electron. 28 (2022). https://doi.org/10.1109/jstqe.2021.3115488

4. Chtioui, M., Enard, A., Carpentier, D., Bernard, S., Rousseau, B., Lelarge, F., Pommereau, F., Achouche, M.: High-performance uni-traveling-carrier photodiodes with a new collector design. IEEE Photonics Technol. Lett. 20, 1163–1165 (2008). https://doi.org/10.1109/LPT.2008.924651

5. Datta, S., Roenker, K.P., Cahay, M.M., Stanchina, W.E.: Implications of hole vs electron transport properties for high speed Pnp heterojunction bipolar transistors. Solid. State. Electron. 43, 73–79 (1999). https://doi.org/10.1016/S0038-1101(98)00237-8

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