Physical modeling and simulation of a high-performance charge sensitive infrared phototransistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s11082-013-9808-8.pdf
Reference18 articles.
1. An, Z.H., Chen, J.C., Ueda, T., et al.: Infrared phototransistor using capacitively coupled two-dimensional electron gas layers. Appl. Phys. Lett. 86, 172106 (2005)
2. An, Z.H., Ueda, T., Hirakawa, K., Komiyama, S.: Reset operation of quantum-well infrared phototransistors. IEEE Trans. Electron Devices 54(7), 1776–1780 (2007)
3. APSYS User’s Manual. http://www.crosslight.com (2011)
4. Crowe, T.W., Globus, T., Woolard, D.L., et al.: Terahertz sources and detectors and their application to biological sensing. Philos. Trans. Royal Soc. Lond. Ser. Math. Phys. Eng. Sci. 362(1815), 365–374 (2004)
5. Fan, L., Ding, L., Weng, Q.C.: Nano-device modeling for charge-sensitive infrared photodetector used in very long wavelength and THz. Integr. Ferroelectr. 145(1), 88–93 (2013)
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