Author:
Hu Yongzheng,Zhang Quande,Li Jinhua
Funder
the Startup Foundation for Introducing Talent of Nanjing University of Information Science
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Attolini, G., Francesio, L., Franzosi, P., Pelosi, C., Gennari, S., Lottici, P.P.: Raman scattering study of residual strain in GaAs/InP heterostructures. J. Appl. Phys. 75(8), 4156–4160 (1994)
2. Bai, Y., Slivken, S., Darvish, S.R., Haddadi, A., Gokden, B., Razeghi, M.: High power broad area quantum cascade lasers. Appl. Phys. Lett. (2009). doi: 10.1063/1.3270043
3. Bismuto, A., Blaser, S., Terazzi, R., Gresch, T., Muller, A.: High performance, low dissipation quantum cascade lasers across the mid-IR range. Opt. Exp. 23(5), 5477–5484 (2015)
4. Emura, S., Gonda, S., Matsui, Y., Hayashi, H.: Internal-stress effects on Raman spectra of In x Ga1−x As on InP. Phys. Rev. B 38(5), 3280–3286 (1988)
5. Feng, Z.C., Allerman, A.A., Barnes, P.A., Perkowitz, S.: Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy. Appl. Phys. Lett. 60(15), 1848–1850 (1992)
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