High-performance transparent AZO UV photodetectors

Abstract

AbstractIn this work, the fabrication of undoped ZnO (ZO) and 3 at.% aluminum (Al) doped ZnO (AZO) thin films (TFs) based transparent photodetectors (PDs) was reported. Both films were spin-coated on fluorine-doped tin oxide (FTO) substrates to investigate the influence of Al doping on the ultraviolet (UV) detection performance of the devices. The systematic characterizations reveal that Al doping positively affects the characteristics of ZO-TFs. The Al doping leads to slight shift in crystalline peaks and induces an enhancement in grain size. In addition, the surface roughness of ZO-TFs gets lower on Al doping. Further, the Al doping improved the transparency and widening of band gap of TFs. The PDs having metal–semiconductor-metal (MSM) configuration were achieved by screen-printing of Ag paste onto ZO and AZO-TFs. The current–voltage (I-V) profiles of the fabricated PDs were measured in the dark and under UV excitation of 365 nm. The AZO-TFs based MSM PD exhibits a spectral responsivity of 326.82 mA/W and an external quantum efficiency of 111.03%. The reproducibility of the fabricated PDs was tested by performing time-dependent photo-response measurements.