Interband optical Raman gain in a strained oxide quantum dot with Hylleraas co-ordinates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-020-02465-8.pdf
Reference34 articles.
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2. Bala, K.J., Peter, A.J., Lee, C.W.: Interband and intersubband optical transition energies in a Ga0.7In0.3 N/GaN quantum dot. Optik 183, 1106 (2019)
3. Baskoutas, S., Paspalakis, E., Terzis, A.F.: Electronic structure and nonlinear optical rectification in a quantum dot: effects of impurities and external electric field. Phys. Rev. B 74, 153306–153310 (2006)
4. Betancourt-Riera, R., Betancourt-Riera, R., Riera, R., Rosas, R.: Electron Raman scattering in asymmetrical multiple quantum wells system with an external electric field. Phys. E 44, 1152–1157 (2012)
5. Butylkin, V.S.: Low-frequency asymptotic behavior of the Raman susceptibility of molecules. JETP 82(1), 38–45 (1996)
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