Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s11082-014-0106-x.pdf
Reference18 articles.
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2. Bandara, K.M.S.V., Levine, B.F., Asom, T.: Tunneling emitter undoped quantum-well infrared photodetector. J. Appl. Phys. 74, 346–350 (1993)
3. Cheah, C.W., Karunasiri, G., Tan, L.S., Zhou, L.F.: Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors. Appl. Phys. Lett. 80, 145–147 (2002)
4. Fu, Y., Willander, M., Jiang, J., Li, N., Lu, W., Liu, H.C.: Photocurrents of $$14\,\mu \text{ m }$$ 14 μ m quantum-well infrared photodetectors. J. Appl. Phys. 93, 9432–9436 (2003)
5. Hu, W., Chen, X., Ye, Z., Feng, A.L., Yin, F., Zhang, B., Liao, L., Lu, W.: Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for long-wavelength HgCdTe-based photovoltaic infrared detector pixel arrays. IEEE J. Sel. Topics Quantum Electron. 19, 4100107 (2013)
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