1. Ashley T. and Elliott C.T. (1991). Operation and properties of narrow-gap semiconductor devices near room temperature using nonequilibrium techniques. Semicond. Sci. Technol. 6: C99–C105
2. Bardeen J., Blatt F.J. and Hall L.H. (1956). Indirect transitions from the valence to the conduction bands. In: Breackenridge, R., Russel, B., and Hahn, E. (eds) Photoconductivity Conference, Atlantic city 1954., pp 146–154. Wiley, New York
3. Bhan R.K. and Dhar V. (2004). Two-layer responsivity modeling of HgCdTe photoconductive detectors. Opto-Electr. Rev. 12: 213–219
4. Burgess R.E. (1954). Fluctuations in the number of charge carriers in a semiconductor. Physica 20: 1007–1010
5. Capper, P.: Properties of Narrow Gap Cadmium-Based Compounds, EMIS data reviews series, No. 10, INSPEC, The institution of Electrical Engineers, London (1995)