Coherent manipulation of three-dimensional probe absorption spectrum in a strained GaAs-AlGaAs-InAs semiconductor quantum dot-Reference-Cited by-同舟云学术

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Coherent manipulation of three-dimensional probe absorption spectrum in a strained GaAs-AlGaAs-InAs semiconductor quantum dot

Published:2024-06-05 Issue:7 Volume:56 Page:
ISSN:1572-817X
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Ai Le,Shi Zhen-Yu,Shui Tao,Yang Wen-Xing

Funder

National Natural Science Foundation of China

Science and Technology Research Project of Education Department of Hubei Province

Innovation Research Groups of Hubei Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11082-024-07118-8.pdf

Reference44 articles.

1. Chen, N., Shui, T., Qian, B.Q., Wang, Z.P., Yu, B.L.: Enhanced refractive index without absorption in semiconductor quantum dots. Quant. Info. Proc. 14, 2387–2396 (2015)

2. Collins, G.P.: Experimenters produce new Bose-Einstein condesate. Phys. Today 49(3), 18–21 (1996)

3. Ding, C., Li, J., Yang, X., Zhang, D., Xiong, H.: Proposal for efficient two-dimensional atom localization using probe absorption in a microwave-driven four-level atomic system. Phys. Rev. A 84(4), 043840 (2011)

4. Hamedi, H.R.: Electron localization in an asymmetric double quantum well nanostructure. Phys. b: Condensed Matter 1(440), 83–87 (2014a)

5. Hamedi, H.R.: Electron localization in an asymmetric double quantum well nanostructure (II): improvement via Fano-type interference. Phys. b: Condensed Matter 1(450), 128–135 (2014b)

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