Dark current in pinned photodiode CMOS image sensors: a pre-fabrication physics-based model
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-023-04860-3.pdf
Reference20 articles.
1. Antonsanti, A., et al.: Probing dark current random telegraph signal in a small pitch vertically pinned photodiode CMOS image sensor after proton irradiation. IEEE Trans. Nucl. Sci. 69(7), 1506–1514 (2022). https://doi.org/10.1109/TNS.2022.3160056
2. Cao, C., Shen, B., Zhang, B., Wu, L., Wang, J.: An improved model for the full well capacity in pinned photodiode CMOS image sensors. IEEE J. Electron. Devices Soc. 3(4), 306–310 (2015). https://doi.org/10.1109/JEDS.2015.2423233
3. Caughey, D.M., Thomas, R.E.: Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE 55(12), 2192–2193 (1967). https://doi.org/10.1109/PROC.1967.6123
4. Dunlap, J.C., Blouke, M.M., Bodegom, E., Widenhorn, R.: Interpreting activation energies in digital image sensors. IEEE Trans. Electron. Devices 63(1), 26–31 (2016). https://doi.org/10.1109/TED.2015.2451661
5. Esqueda, I.S., Barnaby, H.J., King, M.P.: Compact modeling of total ionizing dose and aging effects in MOS technologies. IEEE Trans. Nucl. Sci. 62(4), 1501–1515 (2015). https://doi.org/10.1109/TNS.2015.2414426
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