First principles study in the electronic structures and optical properties of chalcogenide-doped AgInS2
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-021-03115-3.pdf
Reference33 articles.
1. Aguilera, M.L.A., Aguilar Hernández, J.R., González Trujillo, M.A., Ortega Lopez, M.: Photoluminescence studies of p-type chalcopyrite AgInS2:Sn. Solar Energy Mater. Solar Cells 91, 1483–1487 (2007)
2. Aguilera, M.L.A., Ramírez-Rosales, D., González-Trujillo, M.A.: Change from n-type to p-type conductivity on AgInS2 and AgInS2: Sn polycrystalline thin films prepared by spray pyrolysis technique. Thin Solid Films 517, 2535–2537 (2009)
3. Arredondo, C.A., Clavijo, J., Gordillo, G.: Investigation of AgInS2 thin films grown by coevaporation. J. Phys. Conf. Ser. 167, 012050–012054 (2009)
4. Broyden, C.G.: The convergence of a class of double-rank minimization algorithms 1. General considerations. J. Inst. Math. Appl. 6, 76–90 (1970)
5. Cai, Q., Liu, Z., Li, J., Han, C., Tong, Z.: Ga-doped AgInS2 modified with Co–Pi Co–catalyst for efficient photoelectrochemical water splitting. Catal. Lett. 150, 1089–1097 (2020)
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