Study the optoelectronic properties of reduced graphene oxide doped on the porous silicon for photodetector
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-023-05399-z.pdf
Reference51 articles.
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2. Ali, A.T., Ullah, H., Sudhagar, P., Asri, M.M., Devadoss, A., Sundaram, S.: Theapplication of graphene and its derivatives to energy conversion, storage, andenvironmental and biosensing devices. Chem. Rec. 16, 1591–1634 (2016). https://doi.org/10.1002/tcr.201500279
3. Azadgar, N., Naderi, N., Eshraghi, M.J.: Effect of annealing of silver electrodes on photolithographically fabricated silicon trenches for photo detection applications. J. Electron. Mater. 47, 5212–5217 (2018). https://doi.org/10.1007/s11664-018-6396-1
4. Bisi, O., Ossicini, S., Pavesi, L.: Porous silicon: a quantum sponge structure for silicon based optoelectronics. Surf. Sc.i Rep. 38, 1–126 (2000a). https://doi.org/10.1016/S0167-5729(99)00012-6
5. Bisi, O., Ossicini, S., Pavesi, L.: Porous silicon: a quantum sponge structure for silicon based optoelectronics. Surf. Sci. Rep. 38(1), 1–126 (2000b). https://doi.org/10.1016/S0167-5729(99)00012-6
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