Plasma-enhanced chemical vapor deposition of GaxS1−x thin films: structural and optical properties-Reference-Cited by-同舟云学术

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Plasma-enhanced chemical vapor deposition of GaxS1−x thin films: structural and optical properties

Published:2023-08-02 Issue:10 Volume:55 Page:
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Mochalov Leonid,Kudryashov Mikhail,Vshivtsev Maksim,Prokhorov Igor,Kudryashova Yuliya,Mosyagin Pavel,Slapovskaya Ekaterina

Funder

RSF Social Finance

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11082-023-05165-1.pdf

Reference34 articles.

1. Ahamad, T., Alshehri, S.M.: Green synthesis and characterization of gallium(III) sulphide (α-Ga2S3) nanoparicles at room temperature. Nano Hybrids 6, 37–46 (2014)

2. Alderhami, S.A., Collison, D., Lewis, D.J., McNaughter, P.D., O’Brien, P., Spencer, B.F., Vitorica-Yrezabal, I., Whitehead, G.: Accessing γ-Ga2S3 by solventless thermolysis of gallium xanthates: a low-temperature limit for crystalline products. Dalton Trans. 48(41), 15605–15612 (2019)

3. Alsaif, M.M.Y.A., Pillai, N., Kuriakose, S., Walia, S., Jannat, A., Xu, K., Alkathiri, T., Mohiuddin, M., Daeneke, T., Kalantar-Zadeh, K., Ou, J.Z., Zavabeti, A.: Atomically thin Ga2S3 from skin of liquid metals for electrical, optical, and sensing applications. ACS Appl. Nano Mater. 2, 4665–4672 (2019)

4. Chen, X., Hou, X., Cao, X., Ding, X., Chen, L., Zhao, G., Wang, X.: Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge. J. Cryst. Growth 173(1–2), 51–56 (1997)

5. Cingolani, A., Minafra, A., Tantalo, P., Paorici, C.: Edge emission in GaSe and GaS. Phys. Status Solidi 4(1), K83–K85 (1971)

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