Optical absorption bleaching effect in $$\hbox {GaAs}_{1-\mathrm{x}}\hbox {Bi}_{\mathrm{x}}$$ GaAs 1 - x Bi x epitaxial layers-Reference-Cited by-同舟云学术

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Optical absorption bleaching effect in $$\hbox {GaAs}_{1-\mathrm{x}}\hbox {Bi}_{\mathrm{x}}$$ GaAs 1 - x Bi x epitaxial layers

Published:2014-09-06 Issue:4 Volume:47 Page:821-828
ISSN:0306-8919
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Koroliov A.,Adomavičius R.,Butkutė R.,Pačebutas V.,Krotkus A.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11082-014-0001-5.pdf

Reference19 articles.

1. Alberi, K., Dubon, O.D., Walukiewicz, W., Yu, K.M., Bertulis, K., Krotkus, A.: Valence band anticrossing in $$\text{ GaBi }_{\rm {x}}\text{ As }_{\rm {1-x}}$$ GaBi x As 1 - x . Appl. Phys. Lett. 91, 051909 (2007a)

2. Alberi, K., Wu, J., Walukiewicz, W., Yu, K.M., Dubon, O.D., Watkins, S.P., Wang, C.X., Liu, X., Cho, Y.-J., Furdyna, J.: Valence-band anticrossing in mismatched III–V semiconductor alloys. Phys. Rev. B 75, 045203 (2007b)

3. Bennett, B.R., Soref, R.A., Del Alamo, J.A.: Carrier-induced change in refractive index of InP, GaAs and InGaAsP. IEEE J. Quantum Electron. 26, 113–122 (1990)

4. Čechavičius, B., Adomavičius, R., Koroliov, A., Krotkus, A.: Thermal annealing effect on photoexcited carrier dynamics in $$\text{ GaBi }_{\rm {x}}\text{ As }_{\rm {1-x}}$$ GaBi x As 1 - x . Semicond. Sci. Technol. 26, 085033 (2011)

5. Cooke, D.G., Hegmann, F.A., Young, E.C., Tiedje, T.: Electron mobility in dilute GaAs bismide and nitride alloys measured by time-resolved terahertz spectroscopy. Appl. Phys. Lett. 89, 122103 (2006)

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1. GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications;Critical Reviews in Solid State and Materials Sciences;2016-08-11

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