CVD Deposition of Binary AlSb and GaSb Material Films -- a Single-Source Approach
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Springer-Verlag
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http://link.springer.com/content/pdf/10.1007/b136144.pdf
Reference68 articles.
1. AlN is better described as an isolator due to its large direct bandgap of 6.28 eV. Its high melting point (3000 °C) and high thermal conductivity (2.6 Wcm-1 K-1) renders AlN very useful for high power applications
2. (a) Didchenko R, Alix JD, Toeniskoettler RHJ (1960) Inorg Chem 4:35;
3. (b) Harrison B, Tomkins EH (1962) Inorg Chem 1:951;
4. (c) Manasevit HM (1968) Appl Phys Lett 12:156
5. See for example: (a) Jones AC, O'Brien P (1997) CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications. VCH, Weinheim;
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Synthesis and Crystal Structures of the First Antimony(III) Aziridinides;Inorganic Chemistry;2017-03-27
2. CVD Deposition of Binary AlSb and GaSb Material Films — A Single-Source Approach;ChemInform;2006-11-14
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