An Overview of CCD Development at Lawrence Berkeley National Laboratory
Publisher
Springer Netherlands
Reference10 articles.
1. Holland, S.E., Godhaber, G., Groom, D.E., Moses, W.W., et al., 1996, A 200×200 CCD image sensor fabricated on high-resistivity silicon, IEDM Technical Digest, p. 911. 2. Perlmutter, S., Aldering, G., della Valle, M., Deustua, S., Ellis, R.S., Fabbro, S., Fruchter, A., Goldhaber, G., Groom, D.E., Hook, I.M., Kim, A.G., Kim, M. Y., Knop, R.A., Lidman, C., McMahon, R.G., Nugent, P., Pain, R., Ranagia, N., Pennypacker, C.R., Ruiz-Lapuente, P., Schaefer, B., Walton, N., 1998, Discovery of a supernova explosion at half the age of the Universe, Nature, 391, p. 51. 3. U.S. Patent 6,259,085, July 10th, 2000, Fully depleted back illuminated CCD. 4. S.E. Holland, D.E. Groom, N.P. Palaio, R.J. Stover, and M. Wei, Fully-depleted, back-illuminated charge-coupled deviced fabricated on high-resistivity silicon, to be published, IEEE Trans. Elec. Dev 5. B.E. Burke and S.A. Gajar, 1991, Dynamic suppression of interface-state dark current in buried-channel CCDs, IEEE Trans. Elec. Dev., 38, 2, p. 285
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