Influence of Preparation Conditions on the Radiative Recombination in Amorphous Silicon-Reference-Cited by-同舟云学术

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Influence of Preparation Conditions on the Radiative Recombination in Amorphous Silicon

Published:1974 Issue: Volume: Page:1042-1046
ISSN:
Container-title:Proceedings of the Twelfth International Conference on the Physics of Semiconductors
language:
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Author:

Engemann D.,Fischer R.

Publisher

Vieweg+Teubner Verlag

Link

http://link.springer.com/content/pdf/10.1007/978-3-322-94774-1_180

Reference8 articles.

1. Loveland, R.J.: J.Non-Crystal.Sol. 13, 55 (1973/74)

2. Spear, W.E.: Proc.Sth Intern.Conf.on Am.anTLiquid Sem., Garmisch-Partenkirchen (1973)

3. Engemann, D.; Fischer, R.: ibid.

4. Cohen, M.H.: J.Non-Crystal.Sol. 4, 391 (1970)

5. Mott, N.F.; Davis, E.A.: Electronic Processes in Non-Crystalline Materials, Clarendon Press, Oxford 1971

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1. Hydrogenated Microcrystalline Silicon;Light-Induced Defects in Semiconductors;2014-09-13

2. Amorphous Semiconductors: Structure, Optical, and Electrical Properties;Springer Handbook of Electronic and Photonic Materials;2006

3. The spectroscopy of localized states;Topics in Applied Physics;1984

4. Laser annealing of hydrogenated amorphous silicon;Journal of Electronic Materials;1980-09

5. Photoluminescence in pure and doped amorphous silicon;Philosophical Magazine;1977-03

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