Photo-Ionization Selection Rules for Deep Oxygen States in GaP

Author:

Grimmeiss H. G.,Ledebo L. Å.,Ovren C.,Morgan T. N.

Publisher

Vieweg+Teubner Verlag

Reference6 articles.

1. Björklund, G; Grimmeiss, H.G.:S. State Elect. 14, 589 (1971)

2. Kukimoto, H.; Henry, C.H.; Merritt, F.R.: Phys Rev. B7, 2486 (1973).

3. Lucovsky, G.: Solid State Comm. 3, 299 (1965).

4. Morgan, T.N.: Phys. Rev. Lett. 21, 819 (1968).

5. The dipole matrix element between the X1 and X3 bands vanishes because of time-reversal symmetry. This follows from the method described in: Lax, M.: Int. Conf. of the Physics of Semiconductors, Exeter, 395 (1962), when applied to the selection rules between two X1 representations in a diamond-type crystal. The splitting in a III-V crystal of the X1 representation into X1 and X3 does not, to first order, alter the basic band states ,. We find for, f=2.

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impurities in Semiconductors: Experimental;Basic Properties of Semiconductors;1992

2. Two-electron photo-ionization from deep states in semiconductors;Journal of Electronic Materials;1975-10

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