Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Author:

Snitovsky Yu. P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Reference25 articles.

1. Gorelik, S.S., Rekristallizatsiya metallov i splavov (Recrystallization of Metals and Alloys), Moscow: Metallurgiya, 1978.

2. Chernyshov, A.A., Osnovy nadezhnosti poluprovodnikovykh priborov i integral’nykh mikroskhem (Reliability of Semiconductor Devices and Integrated Circuits), Moscow: Radio i Svyaz’, 1988.

3. Snitovsky, Yu.P., Failure of Discrete Transistors through Aluminum Metallization Recrystallization, Elektron. Tekh., Ser. 8: Upr. Kach., Metrol., Stand., 1979, no. 4, pp. 38–41.

4. VLSI Technology, Fundamentals and Applications, Tarui, Y., Ed., New York: Wiley, 1985. Translated under the title Osnovy tekhnologii SBIS, Moscow: Radio i Svyaz’, 1985.

5. Snitovsky, Yu.P., Portnov, L.Ya., and Dankevich, A.L., Two-Level LSI Metallization System with Large Second-Level Metallization Area, Mikroelektronika, 1991, vol. 20, no.2, pp. 150–154.

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