Properties of biexcitons in multi-valley semiconductors

Author:

Morgan T. N.

Publisher

Springer Science and Business Media LLC

Subject

General Medicine

Reference18 articles.

1. O. Akimoto andE. Hanamura:Journ. Phys. Soc. Japan,33, 1537 (1972);W.-T. Huang:Phys. Stat. Sol.,60 (b), 309 (1973);W. F. Brinkman, T. M. Rice andB. Bell:Phys. Rev. B,8, 1570 (1973). See also references therein to previous work.

2. This is also called the «interband» interaction. SeeE. Hanamura:Journ. Phys. Soc. Japan,39, 1506 (1975). The «Coulomb» part is recognized in this reference.

3. The exchange interaction of excitons is discussed in the following two useful papers.G. E. Pikus andG. L. Bir:Sov. Phys. JETP,33, 108 (1971)—here in eq. (47) the sign ofΛ 1 should be changed—andM. Suffczynski, L. Swierkowski andW. Wardzynski:J. Phys. C,8, L52 (1975).

4. The dependence of ε onr 12 is neglected in this paper. SeeH. Haken: inPolarons and Excitons, edited byC. G. Kuper andG. D. Whitfield (Edinburg, 1963), p. 295.

5. E. J. Elliott: inPolarons and Excitons, edited byC. G. Kuper andG. D. Whitfield (Edinburgh, 1963), p. 269, especially eq. (6.7).

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1. Observation of ExcitonicN-Body Bound States: Polyexcitons in Diamond;Physical Review Letters;2013-07-09

2. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03

3. Polyexcitons in ultrapure silicon;Nature;1988-04

4. Discovery of Polyexcitons;Physical Review Letters;1987-12-21

5. Time-Resolved Luminescence Spectra of AgBr at High Density Excitations;Journal of the Physical Society of Japan;1987-07-15

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