Point defects in Cd1−xZnxTe: A correlated photoluminescence and EPR study-Reference-Cited by-同舟云学术

Point defects in Cd1−xZnxTe: A correlated photoluminescence and EPR study

Published:1998-06 Issue:6 Volume:27 Page:813-819
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Rablau C. I.,Setzler S. D.,Halliburton L. E.,Giles N. C.,Doty F. P.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0058-7.pdf

Reference18 articles.

1. For a recent review, see R.B. James, T.E. Schlesinger, Jim Lund and Michael Schieber, Semiconductors and Semimetals Vol. 43, eds. T.E. Schlesinger and R.B. James (San Diego: Academic Press, 1995).

2. J.F. Butler, B. Apotovsky, A. Niemela and H. Sipila, Proc. SPIE Vol. 2009 (Bellingham, WA: SPIE, 1993), p. 121.

3. J.R. Heffelfinger, D.L. Medlin, H. Yoon, H. Hermon and R.B. James, SPIE Proc. Vol. 3115 (Bellingham, WA: SPIE, 1997), p. 40.

4. F.P. Doty, J.P. Cozzatti and J.P. Schomer, SPIE Proc. Vol. 3115 (Bellingham, WA: SPIE, 1997), p. 51.

5. M.V. Alekseenko and A.I. Veinger, Sov. Phys. Semicond. 8, 143 (1974).

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