MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors-Reference-Cited by-同舟云学术

MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

Published:1997-06 Issue:6 Volume:26 Page:488-492
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Wu Owen K.,Rajavel Rajesh D.,De Lyon Terry J.,Jensen John E.,Jack Mike D.,Kosai Ken,Chapman George R.,Sen Sanghamitra,Baumgratz Bonnie A.,Walker Bobby,Johnson Bill

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-997-0182-9.pdf

Reference13 articles.

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3. O.K. Wu, R.D. Rajavel, T.J. DeLyon, J.E. Jensen, C.A. Cockrum, S.M. Johnson, G.M. Venzor, G.R. Chapman, J.A. Wilson, E.A. Patten and W.A. Radford, SPIE 2685,16 (1996).

4. E.R. Blazejewski, J.M. Arias, G.M. Williams, M. Zandian, J.G. Pasko and W. McLevige J. Vac. Sci. Technol. B 10 (4), 1649(1992).

5. J.M. Arias, M. Zandian, R. Zucca and J. Singh, Semi. Sei. and Technol. 8, S255 (1993).

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