Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctions-Reference-Cited by-同舟云学术

Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF 2 + , and As+ ion implanted junctions

Published:1998-12 Issue:12 Volume:27 Page:1296-1314
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Downey Daniel F.,Marcus Steven D.,Chow Judy W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0089-0.pdf

Reference18 articles.

1. D.F. Downey, C.M. Osburn, and S. Marcus, Solid State Technol. 71, Dec. (1997).

2. C.M. Osburn, D.F. Downey, S.B. Felch and B.S. Lee, Proc. 11th Intl. Conf. on Ion Implantation Technology, (1997), p. 607.

3. S.B. Felch, B.S. Lee, D.F. Downey, Z. Zhao and R. Eddy, Proc. 11th Intl. Conf. on Ion Implantation Technology, (1997), p. 611.

4. S.L. Daryanani, D.F. Downey, J.J. Cummings, M. Meloni, C. McKenna and Z. Nényei European Semiconductor Magazine, April (1997).

5. D.F. Downey, S.L. Daryanani, M. Meloni, K.Brown, S.B. Felch, B.S. Lee, S. Marcus and J. Gelpey, presented at the Materials Research Society Symposium, Rapid Thermal and Integrated Processing Session (April 1997).

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