RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants-Reference-Cited by-同舟云学术

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Published:1998-12 Issue:12 Volume:27 Page:1291-1295
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Marcus Steven,Lerch Wilfried,Downey Daniel F.,Todorov Stanislov,Chow Judy

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-998-0088-1.pdf

Reference18 articles.

1. D.F. Downey, C.M. Osburn and S. Marcus, Solid State Technol. 71, Dec. (1997).

2. C.M. Osburn, D.F. Downey, S.B. Felch and B.S. Lee, Proc. 11th Intl. Conf. on Ion Implantation Technology, (1997), p. 607.

3. S.B. Felch, B.S. Lee, D.F. Downey, Z. Zhao and R. Eddy, Proc. 11th Intl. Conf. on Ion Implantation Technology, (1997), p. 611.

4. S.L. Daryanani, D.F. Downey, J.J. Cummings, M. Meloni, C. McKenna and Z. Nényei, European Semiconductor Magazine April (1997).

5. D.F. Downey, S.L. Daryanani, M. Meloni, K. Brown, S.B. Felch, B.S. Lee, S. Marcus and J. Gelpey, presented at the Materials Research Society Symp., Rapid Thermal and Integrated Processing Session, April, 1997.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monitoring of rapid thermal anneal with secondary ion mass spectrometry;Journal of Vacuum Science & Technology B;2024-05-01

2. Shallow junction formation via lateral boron autodoping during rapid thermal process;Journal of Physics D: Applied Physics;2023-08-08

3. Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process;Japanese Journal of Applied Physics;2002-02-15

4. Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF2+ ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01

5. Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants;Journal of Electronic Materials;1999-12