Nature of the phase responsible for the formation of SIC-type growth defects during gas-phase epitaxy of III-V compounds-Reference-Cited by-同舟云学术

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Nature of the phase responsible for the formation of SIC-type growth defects during gas-phase epitaxy of III-V compounds

Published:1985-02 Issue:2 Volume:28 Page:149-153
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Krasil'nikova L. M.,Krivolapov N. N.,Akhmetshin M. R.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00912512.pdf

Reference16 articles.

1. L. G. Lavrent'eva, L. P. Porokhovnichenko, I. V. Ivonin, and L. M. Krasil'nikova, in: Structural Defects in Semiconductors [in Russian], Nauka, Novosibirsk (1973), p. 50.

2. L. M. Krasil'nikova, I. V. Ivonin, and L. G. Lavrent'eva, in: The Synthesis and Growth of Perfect Semiconductor Crystals and Films [in Russian], Nauka, Novosibirsk (1981), p. 175.

3. L. G. Lavrent'eva, I. V. Ivonin, L. M. Krasil'nikova, and M. D. Vilisova, Kristal und Technik,15, 683 (1980).

4. G. A. Aleksandrova, I. V. Ivonin, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 4, 110 (1982).

5. L. G. Lavrent'eva, L. P. Porokhovnichenko, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., No. 1, 20 (1974).

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