Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters-Reference-Cited by-同舟云学术

Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters

Published:1990-10 Issue:10 Volume:19 Page:1089-1094
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Anthony B.,Hsu T.,Breaux L.,Qian R.,Banerjee S.,Tasch A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651986.pdf

Reference6 articles.

1. B. Anthony, T. Hsu, L. Breaux, S. Banerjee and A. Tasch, to be published in Characterization of Plasma-enhanced CVD Processes, eds. D. Hess, G. Lucovsky and D. Ibbotson, (Mater. Res. Soc., Pittsburg, PA) 1989 in press.

2. “Nanospec” is a trademark of the Nanometrics Corp. 3. W. Kern, Semicond. Int. p. 94, April (1984).

3. “Nanochem” is a registered trademark of Semi Gas Corp.

4. B. Anthony, L. Breaux, T. Hsu, S. Banerjee and A. Tasch, J. Vac. Sci. Technol.B7, 621 (1989).

5. T. Hsu, B. Anthony, L. Breaux, S. Banerjee and A. Tasch, to be published in J. Electron. Mater.

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