Low-temperature epitaxy using Si2H6-Reference-Cited by-同舟云学术

Low-temperature epitaxy using Si2H6

Published:1990-10 Issue:10 Volume:19 Page:1095-1100
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Mieno F.,Furumura Y.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02651987.pdf

Reference9 articles.

1. C. H. Dennison, A. T. Wu, P. K. Ko, C. I. Drowley and D. Bradbury, IEDM Tech. Digest,204 (1985).

2. M. Nakano, Proc., Second Int. Symp. on ULSI Sci. and Tech.123 (1988).

3. F. Mieno, Y. Furumura, and M. Maeda, Ext. Abst. 18th Conf. on SSDM, Tokyo,49 (1986).

4. F. Mieno, Y. Furumura and M. Maeda, Ext. Abst., ECS meeting, Philadelphia,374 (1987).

5. F. Mieno, A. Shimizu, S. Nakamura, T. Deguchi, N. Haga, I. Matsumoto, Y. Furumura, T. Yamauchi, K. Inayoshi, M. Maeda and K. Yanagida, IEEE IEDM16 (1987).

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