Investigation of charge intensification effect in a-Si:H by means of photoelectric sensitivity method

Author:

Hai Yuhan,Hai Hao,Xi Zhonghe,Zhang Qiang

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Reference17 articles.

1. A. Rose, Concepts in Photoconductivity and Allied Problems, New York: John Wiley Sons, Inc,. 1963, 77.

2. R. Loveland, et al., Photoconductivity and absorption in a-Si, J. Non-cryst. Solids, 13(1973)1, 55–68.

3. P. Zanzucchi, C. Wronski, D. Calson, Optical and photoconductive properties of discharge-produced amorphous silicon, J. Appl. Phys., 48(1977)12, 5227–5236.

4. R. Williams, R. Crandall, Carrier generation, recombination and transport in a-Si solar cells, RCA Rev., 40(1979)4, 371–389.

5. Han Jinghong, Hai Yuhan, Zhou Zongyi, Photoelectric properties of a-Si:H films with high photosensitivity, Proceedings for 3rd National Symposium on Materials and Physics of Amorphous State, Huangshan, China: 1982, 142–145, (in Chinese).

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