Characteristics of SrBi 2 Ta 2 O 9 ferroelectric films on GaAs with a TiO 2 buffer layer-Reference-Cited by-同舟云学术

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Characteristics of SrBi 2 Ta 2 O 9 ferroelectric films on GaAs with a TiO 2 buffer layer

Published:2003-02-01 Issue:2 Volume:76 Page:197-199
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Liu X.H.,Liu Z.G.,Wang Y.P.,Zhu T.,Liu J.M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390201417.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate;Frontiers in Materials;2022-04-27

2. Controlled high-quality interface of a Ti2.5O3(0 1 0)/GaAs(0 0 1) heterostructure enabled by minimized lattice mismatch and suppressed ion diffusion;Journal of Colloid and Interface Science;2020-02

3. Epitaxial deposition of BaTiO 3 on TiO 2 buffered GaAs(001) substrate;Thin Solid Films;2017-11

4. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor;Nano Letters;2017-09-13

5. Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

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