A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching

Author:

Rashtian Hooman,Mirabbasi Shahriar,Taris Thierry,Deval Yann,Begueret Jean-Baptiste

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference27 articles.

1. Bensky, A. (2004). Short-range wireless communication: fundamentals of RF system design and application (2nd ed.). Burlington: Elsevier.

2. Natarajan, A., Nicolson, S., Tsai, M. & Floyd, B. (2008). A 60 GHz variable gain LNA in 65-nm CMOS. In IEEE Asian solid-state circuits conference.

3. Gilbert, B. (1991). A low-noise wideband variable-gain amplifier using an interpolated ladder attenuator. In IEEE international solid-state circuits conference (ISSCC), Digest of technical papers (pp. 280–281).

4. Wu, C. H., Liu, C. S. & Liu, S. I. (2004). A 2-GHz CMOS variable-gain amplifier with 50-dB linear-in-magnitude controlled gain range for 10GBase-LX4 ethernet. In IEEE international solid-state circuits conference (ISSCC), Digest of technical papers (pp. 484–541).

5. Feng, K. L. (1999). Dual-band high-linearity variable-gain low-noise amplifiers for wireless applications. In IEEE international solid-state circuits conference (ISSCC), Digest of technical papers (pp. 224–225).

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