Linear in dB, sub 0.2 dB gain-step CMOS programmable gain amplifier for ultrasound applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/article/10.1007/s10470-017-1016-1/fulltext.html
Reference10 articles.
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2. Ismail, A., & Abidi, A. A. (2005). A 3.1- to 8.2-GHz zero-IF receiver and direct frequency synthesizer in 0.18-µm SiGe BiCMOS formode-2MB-OFDMUWB communication. IEEE Journal of Solid State Circuits and Systems, 40(12), 2573–2582.
3. Elwan, H., Tekin, A., & Pedrotti, K. (2009). A differential-ramp based 65 dB linear VGA technique in 65 nm CMOS. IEEE Journal of Solid State Circuits and Systems, 44(9), 2503–2514.
4. Liu, H., Zho, X., Boon, C. C., & He, X. (2015). Cell-based variable-gain amplifiers with accurate dB-linear characteristic in 0.18 µm CMOS technology. IEEE Journal of Solid State Circuits and Systems, 50(2), 586–596.
5. Kang, S. Y., Ryu, S. T., & Park, C. S. (2012). A precise decibel-linear programmable gain amplifier using a constant current-density function. IEEE Transactions on Microwave Theory and Techniques, 60(9), 2843–2850.
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2. A 6-Bit Ku Band Digital Step Attenuator with Low Phase Variation in 0.13-μm SiGe BiCMOS;Electronics;2019-10-11
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