A 2.55-mW on-chip passive balun-LNA in 180-nm CMOS
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
https://link.springer.com/content/pdf/10.1007/s10470-022-01997-1.pdf
Reference20 articles.
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2. Long, J. R. (2000). Monolithic transformers for silicon RF IC design. IEEE Journal of Solid-State Circuits, 35(9), 1368–1382. https://doi.org/10.1109/4.868049.
3. Kapur, S., Long, D. E., Frye, R. C., Chen, Y., Cho, M., Chang, H., et al. (2007). Synthesis of optimal on-chip Baluns. IEEE Custom Integrated Circuits Conference, 2007, 507–510. https://doi.org/10.1109/CICC.2007.4405782.
4. Zhuo, W., Li, X., Shekhar, S., Embabi, S. H. K., de Gyvez, J. P., Allstot, D. J., & Sanchez-Sinencio, E. (2005). A capacitor cross-coupled common-gate low-noise amplifier. IEEE Transactions on Circuits and Systems II: Express Briefs, 52(12), 875–879. https://doi.org/10.1109/TCSII.2005.853966
5. Rotella, M., Cismaru, C., Tkachenko, Y., Cheng, Yuhua, & Zampardi, J. (2006). Characterization, design, modeling, and model validation of silicon-wafer M:N Balun components under matched and unmatched conditions. IEEE Journal of Solid-State Circuits, 41(5), 1201–1209. https://doi.org/10.1109/JSSC.2006.872736.
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