Design methodology for low power RF LNA based on the figure of merit and the inversion coefficient
Author:
Funder
IMS Laboratory
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s10470-016-0718-0.pdf
Reference11 articles.
1. Dumesnil, E., Nabki, F., and Boukadoum, M. (2014). « RF-LNA circuit synthesis by genetic algorithm-specified artificial neural network. In 2014 21st IEEE international conference on electronics, circuits and systems (ICECS) (pp. 758–761).
2. Rahnama, M., Gilmalek, Y. M., and Kordalivand, A. M. (2010). Ultra wide-band LNA using RFCMOS technology and tunability band with neural network. In 2010 IEEE control and system graduate research colloquium (ICSGRC) (pp. 75–79).
3. Enz, C. C., & Vittoz, E. A. (2006). Charge-based MOS transistor modeling. Chichester: Wiley.
4. Tsividis, Y. (1999). Operation and modeling of the MOS transistor (2nd ed.). New York: Mc-Graw Hill.
5. Vittoz, E. A., & Fellrath, J. (1977). CMOS analog integrated circuits based on weak inversion operation. IEEE Journal of Solid-State Circuits, 12(3), 224–231.
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