Design of sub-1-V CMOS bandgap reference circuit using only one BJT
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/content/pdf/10.1007/s10470-011-9737-z.pdf
Reference11 articles.
1. Mok, P. K. T., & Leung, K. N. (2004). Design considerations of recent advanced low-voltage low-temperature-coefficient CMOS bandgap voltage reference. In IEEE 2004 custom integrated circuits conference (pp. 635–642).
2. Banba, H., Shiga, H., Umezawa, A., Tanzawa, T., Atsumi, S., & Sakui, K. (1999). A CMOS bandgap reference circuit with sub-1-V operation. IEEE Journal of Solid-State Circuits, 34, 670–674.
3. Malcovati, P. (2001). Curvature-compensated BiCMOS bandgap with 1-V supply voltage. IEEE Journal of Solid-State Circuits, 36(7), 1076–1081.
4. Jiang, Y., & Lee, E. K. F. (2000). Design of low-voltage bandgap reference using transimpedance amplifier. IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 47(6), 552–555.
5. Leung, K. N., & Mok P. K. T. (2002). A sub-1-V 15-ppmdC CMOS bandgap voltage reference without requiring low threshold voltage device. IEEE Journal of Solid-State Circuits, 37, 526–530.
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