Low-power 10 Gb/s inductorless inverter based common-drain active feedback transimpedance amplifier in 40 nm CMOS

Author:

Atef Mohamed,Zimmermann Horst

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference17 articles.

1. Fields, C., Tsen, T., McGuire, C., Yoon, Y., Zehnder, D., Thomas, S., et al. (2010). “110+ GHz transimpedance amplifier in inp-hbt technology for 100 Gbitethernet”. IEEE Microwave and Wireless Components Letters, 20, 465–467.

2. Wu, C., Sovero, E., & Massey, B. (2003). 40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors. IEEE Journal ofSolid-State Circuits, 38, 1518–1523.

3. Wang, C. Y, Wang, C. S., Wang, C. K. (2007). An 18-mW two-stage CMOS transimpedance amplifier for 10 Gb/s optical application in Proceedings of IEEE Asian Solid-State Circuits Conference in Jeju (pp. 412–415).

4. Kim, J., & Buckwalter, J. (2010). Bandwidth enhancement with low group-delay variation for a 40-Gb/s transimpedance amplifier. IEEE Transactions on Circuits and Systems I (TCAS I), 57, 1964–1972.

5. Aflatouni, F., & Hashemi, H. (2009). A 1.8 mW wideband 57 dBΩ transimpedance amplifier in 0.13 μm CMOS in IEEE Radio Frequency Integrated Circuits Symposium, Digest of Papers in Boston (pp. 57–60).

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