A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

Author:

Akbey Yunus,Palatmutcuogullari Osman

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference18 articles.

1. Jung, D. Y., Park, S. H., Lee, K. H., Chang, W. J., Nam, E. S., Lim, J. W., & Park, C. S. (2002). An InGaP/GaAs HBT transimpedance amplifier for 10 Gb/s optical communication. 3rd International Conference on Microwave and Millimeter Wave Technology, ICMMT, pp. 974–977.

2. Fukuyarna, H., Murata, K., Sano, K., Kitabayashi, H., Yamane, Y., Enoki, T., & Sugahara, H. (2003). Optical receiver module using an InP HEMT transimpedance amplifier for over 40 Gbit/s. IEEE Gallium Arsenide Integrated Circuit Symposium, 25th Annual Technical Digest, pp. 237–240.

3. Lu, Y., & El-Gamal, M. N. (2001). A 2.3 V low noise, low power, 10 GHz bandwidth Si-bipolar transimpedance preamplifier for optical receiver front-ends. IEEE International Symposium on Circuits and Systems, ISCAS, vol. 4. pp. 834–837.

4. Tang, W., & Plant, D. V. (2006). A low power 3.125 Gb/s/channel parallel optical receiver for very short reach applications. 23rd Biennial Symposium on Communications, pp. 35–38.

5. Razavi, B. (2003). Design of integrated circuits for optical communications. Los Angeles, USA: McGraw-hill.

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