Resonance gate bias cascode class-E power amplifier in GaAs pHEMT technology
Author:
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Link
http://link.springer.com/article/10.1007/s10470-018-1352-9/fulltext.html
Reference20 articles.
1. Raab, F. H., Asbeck, P., Cripps, S., & Sokal, N. O. (2002). A power amplifier and transmititer for RF and microwave. The IEEE Transactions on Microwave Theory and Techniques, 50(3), 814–826.
2. Grebennikov, A., Sokal, N., & Franco, M. (2012). Switch-mode RF and Microwave Power. New York: Elsevier.
3. Sokal, N. O., & Sokal, A. D. (1975). Class-E a new class of high-efficiency tuned single-ended switching power amplifier. IEEE Journal of Solid-State Circuits, 10(3), 168–176.
4. Kessler, D. J., & Kazimierczuk, M. K. (2004). Power losses and efficiency of class-E power amplifier at any duty ratio. IEEE Transactions on Circuits and Systems—I: Regular papers, 51(9), 1675–1689.
5. Brama, R., Larcher, L., Mazzanti, A., & Svelto, F. (2008). A 30.5 dBm 48% PAE CMOS class-E PA with integrated balun for RF applications. IEEE Journal of Solid-State Circuits, 43(8), 1755–1762.
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