High-voltage tolerant power driver with enhanced current drivability for integrated power applications

Author:

Geng Yongtao,Bondade Rajdeep,Ma Dongsheng

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference15 articles.

1. Bandyopadhyay, S., Ramadass, Y. K., & Chandrakasan, A. P. (2011). 20 μA to 100 mA DC–DC converter with 2.8–4.2 V battery supply for portable applications. IEEE Journal of Solid-State Circuits, 12(46), 2807–2820.

2. Chung, J. W., Lee, J.-K., Piner, E. L., & Palacios, T. (2009). Seamless on-wafer integration of Si(100) MOSFETs and GaN HEMTs. IEEE Electron Device Letters, 10(30), 1015–1017.

3. Rahman, A., Agostinelli, M., Bai, P., et al. (2011). Reliability studies of a 32 nm System-on-Chip (SoC) platform technology with 2nd generation high-k/metal gate transistors. In IEEE international symposium on reliability physics (pp. 3.1–3.6).

4. Li, Y. M., Wen, C.-B., Yuan, B., Wen, L.-M., & Ye, Q. (2010). A high speed and power-efficient level shifter for high voltage buck converter drivers. In IEEE International conference on solid-state and integrated circuit technology (pp. 309–311).

5. Lee, T. J., Chang, T.-Y., & Wang, C.-C. (2009). Wide-range 5.0/3.3/1.8-V I/O buffer using 0.35-μm 3.3-V CMOS technology. IEEE Transactions Circuits Systems I: Regular Papers, 4(56), 763–772.

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