Author:
Li Zhelu,Fan Wei,Xi Jianxiong,He Lenian,Xie Ning,Sun Kexu
Funder
the Key Lab of Infrared Devices and Materials, Shanghai Institute of Technical Physics of the Chinese Academy of Sciences
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Reference19 articles.
1. Bigas, M., Cabruja, E., Forest, J., & Salvi, J. (2006). Review of CMOS image sensors. Microelectronics Journal, 37(5), 433–451.
2. Luštica, A. (2011). CCD and CMOS image sensors in new HD cameras. In 2011 Proceedings ELMAR (pp. 133–136). IEEE.
3. Djite, I., Estribeau, M., Magnan, P., Rolland, G., Petit, S., & Saint-Pe, O. (2012). Theoretical models of modulation transfer function, quantum efficiency, and crosstalk for CCD and CMOS image sensors. IEEE Transactions on Electron Devices, 59(3), 729–737.
4. Fossum, E. R., & Hondongwa, D. B. (2014). A review of the pinned photodiode for CCD and CMOS image sensors. IEEE Journal of the Electron Devices Society, 2(3), 33–43.
5. Yonemoto, K., Sumi, H., Suzuki, R., & Ueno, T. (2000, February). A CMOS image sensor with a simple FPN-reduction technology and a hole accumulated diode. In Digest of technical papers. ISSCC. 2000 IEEE international solid-state circuits conference, 2000 (pp. 102–103). IEEE.
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