Fully integrated CMOS tunable power amplifier using reconfigurable input/interstage/output matching networks

Author:

Hamidi S. BabakORCID,Dawn Debasis

Funder

National Science Foundation

Publisher

Springer Science and Business Media LLC

Subject

Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing

Reference20 articles.

1. Imanishi, D., Okada, K., & Matsuzawa, A. (2009). A 0.9–3.0 GHz fully integrated tunable CMOS power amplifier for multi-band transmitters. IEEE Asian Solid-State Circuits Conference, pp 253–256.

2. Magnusson, H., & Olsson, H. (2007). A compact dual-band power amplifier driver for 2.4 GHz and 5.2 GHz WLAN transmitters. IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, pp 83–86.

3. Park, J., Lee, C., & Park, C. (2015). A quad-band CMOS linear power amplifier for EDGE applications using an anti-phase method to enhance its linearity. IEEE Transactions on Circuits and Systems I: Regular Papers, 99, 1–12.

4. Aniktar, H., et al. (2006). A 850/900/1800/1900 MHz quad-band CMOS medium power amplifier. European Microwave Conference (EuMC), Manchester, pp 403–406.

5. Nitesh, R. S., et al. (2018). A 700 MHz to 2.5 GHz cascode GaAs power amplifier for multi-band pico-cell achieving 20 dB gain, 40 dBm to 45dBm OIP3 and 66% peak. IEEE Access, 6, 818–829.

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