Author:
Kim Daehyeok,Park Sunghyun,Lee Munkyo,Nah Sunphil,Song Minkyu
Funder
Hanwha Thales and the NRF
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Reference29 articles.
1. Deguchi, K., et al. (2008). A 6-bit 3.5 GS/s 0.9-V 98-mW flash ADC in 90-nm CMOS. IEEE Journal of Solid-State Circuits, 43, 2303–2310.
2. Ito, T, et.al. (2010). A 3-GS/s 5-bit 36-mW flash ADC in 65-nm CMOS. IEEE Asian solid-state circuits conference (pp. 67–68).
3. Stepanovic, D. et.al. (2012). A 2.8 GS/s 44.6 mW time-interleaved ADC achieving 50.9 dB SNDR and 3 dB effective resolution bandwidth of 1.5 GHz in 65 nm CMOS. IEEE VLSI symposium (pp. 35–36).
4. Sauerbrey, J., Schmitt-Landsiedel, D., & Thewes, R. (2003). A 0.5-V 1-μW successive approximation ADC. IEEE Journal of Solid-State Circuit, 38, 1261–1265.
5. Wang, J. F., Lin, S. C., & Hsu, J. H. (2003). 12-bit fully differential switched capacitor non-calibrating SA-ADC with one reference voltage. The 14th VLSI design/CAD symposium (pp. 68–73).
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