The Electronic and Optical Properties of Vertically Stacked GaN-WS2 Heterostructure
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s11595-022-2495-1.pdf
Reference33 articles.
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4. Zhang Y D, Zhang B Y, Wang M H, et al. Growth and Characteristics of n-VO2/p-GaN Based Heterojunctions[J]. J. Wuhan Univ. Technol. -Mater. Sci. Ed., 2020, 35(2): 342–347
5. Liu J, Ma Y Q, Dai Y W, et al. Electronic Properties of Size-dependent MoTe2-WTe2 Heterostructure[J]. Chin. Phys. B, 2019, 28: 107 101
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