An approach for preparation of porous silicon/rare earth hybrid — Immersion method
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-009-6970-8.pdf
Reference9 articles.
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2. Gong M L, Shi J X, Wong W K, et al. A Novel Electrochemical Approach for Fabrication of Photoluminescent Erbium-doped Porous Silicon[J]. Appl. Phys. A, 2000, 68: 107–110
3. Zheng B, Michel J, Kimerling L C, et al. Room-temperature Sharp Line Electroluminescence at 1.54 μm from an Erbiumdoped Silicon Light-emitting Diode[J]. Appl. Phys. Lett., 1994, 64(21): 2842–2844
4. Dorofeev A M, Gaponenko N V, Bondarenko V P, et al. Erbium Luminescence in Porous Silicon Doped from Spin-on Films[J]. J. Appl. Phys., 1995, 77: 2679–2681
5. Najar A, Charrier J, Ajlani H, Lorrain N, Haesaert S, Oueslati M, Haji L. Optical Gain at 1.53 µm in Er3+-Yb3+ Co-doped Porous Silicon Waveguides[J]. Materials Science and Engineering: B, 2008, 146(1–3): 260–262
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