Fabrication and properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si resistive switching heterostructure devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-017-1631-9.pdf
Reference20 articles.
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2. Choi B J, Jeong D S, Kim S K, et al. Resistive Switching Mechanism of TiO2 Thin Films Grown by Atomic-layer Deposition[J]. J. Appl. Phys., 2005, 98(3): 033715
3. Zhang T, Zhang X, Ding L H, et al. Study on Resistance Switching Properties of Na0.5Bi0.5TiO3 Thin Films Using Impedance Spectroscopy[J]. Nanoscale Res. Lett., 2009, 4(11): 1309
4. Waser R, Dittmann R, Staikov G, et al. Redox-based Resistive Switching Memories-nanoionic Mechanisms, Prospects, and Challenges[J]. Adv. Mate., 2009, 21: 2632
5. Lai Y S, Tu C H, Kwong D L, et al. Bistable Resistance Switching of Poly (N-vinylcarbazole) Films for Nonvolatile Memory Applications[J]. Appl. Phys. Lett., 2005, 87(12): 122101
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