Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature
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Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11595-017-1563-4.pdf
Reference26 articles.
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3. Zhang D H, Yang T L, Ma J, et al. Preparation of Transparent Conducting ZnO:Al Films on Polymer Substrates by R. F. Magnetron Sputtering[J]. Appl. Surf. Sci., 2000, 158: 43–48
4. Wang X, Zeng X, Huang D, et al. The Properties of Al Doped ZnO Thin Films Deposited on Various Substrate Materials by RF Magnetron Sputtering[J]. J. Mater. Sci. Mater. Electron., 2012, 23: 1580–1586
5. Anura P S, Luís M F R, Vitor G, et al. Cohesive Strength of Nanocrystalline ZnO:Ga Thin Films Deposited at Room Temperature[J]. Nanoscale. Res. Lett., 2011, 6: 309
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