Some features of the current-voltage characteristics of p(SiC)?n(CdS) junctions-Reference-Cited by-同舟云学术

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Some features of the current-voltage characteristics of p(SiC)?n(CdS) junctions

Published:1970-08 Issue:8 Volume:13 Page:1122-1124
ISSN:0038-5697
Container-title:Soviet Physics Journal
language:en
Short-container-title:Soviet Physics Journal

Author:

Dovgoshei N. I.,Chepur D. V.,Kopinets I. F.,Zolotarev V. F.,Stafeev V. I.,Fantich A. M.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/BF00818586.pdf

Reference13 articles.

1. S. A. Goryainov (editor), Negative-Resistance Semiconducting Devices [Russian translation], Gosenergoizdat (1962).

2. Physics of p-n Junctions [in Russian], Izd. Zinatne, Riga (1966).

3. W. W. Tyler, Phys. Rev.,96, 226, October (1954).

4. A. A. Lebedev, V. I. Stafeev, and V. I. Tuchkevich, Zh. Tekh. Fiz.,26, 2131 (1956).

5. N. Holonyak, Proc. IRE,50, 2421 (1962).

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