Transition metal impurities in silicon: New defect reactions-Reference-Cited by-同舟云学术

Transition metal impurities in silicon: New defect reactions

Published:1989-10 Issue:4 Volume:49 Page:431-436
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Czaputa R.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00615028.pdf

Reference19 articles.

1. D.V. Lang: InThermally Stimulated Relaxation in Solids (Springer, Berlin, Heidelberg 1979) pp. 93?132

2. G.W. Ludwig, H.H. Woodbury:Solid State Physics, ed. by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New York 1962) Vol. 13, p. 223

3. H.H. Woodbury, G.W. Ludwig: Phys. Rev.126, 466 (1962)

4. G.D. Watkins: Physica 117B & 118B, 9 (1983)

5. Z. Jie, R. Shengyang, H. Hong, G. Weikun, J. Xiujiang, L. Shuying: InDefects in Semiconductors, ed. by H.J. von Bardeleben (Trans. Tech. Publications, Switzerland 1986),

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